AUIRLR2703TR【PDF 1/12 页】MOSFET N-CH 30V 20A DPAK

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PD - 97620

AUTOMOTIVE GRADE

AUIRLR2703

Advanced Planar Technology

Logic-Level Gate Drive

Low On-Resistance

Dynamic dV/dT Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

HEXFET ? Power MOSFET

V (BR)DSS 30V

R DS(on) max. 45m ?

I D (Silicon Limited) 23A

I D (Package Limited) 20A

Automotive Qualified*

Description

Specifically designed for Automotive applications,

this cellular design of HEXFET? Power MOSFETs

utilizes the latest processing techniques to achieve

low on-resistance per silicon area. This benefit

combined with the fast switching speed and

D-Pak

AUIRLR2703

ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

Gate

Drain

Source

in Automotive and a wide variety of other applications.

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T A ) is 25°C, unless otherwise specified.

Parameter

I D @ T C = 25°C Continuous Drain Current, V GS @ 10V (Silicon Limited)

I D @ T C = 100°C Continuous Drain Current, V GS @ 10V

I D @ T C = 25°C Continuous Drain Current, V GS @ 10V (Package Limited)

Max.

Units

I DM

Pulsed Drain Current

P D @T C = 25°C Power Dissipation

Linear Derating Factor

0.30

W/°C

V GS

E AS

E AS (tested )

I AR

E AR

dv/dt

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery

± 16

200

4.5

5.0

V/ns

T J

T STG

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case )

-55 to + 175

300

°C

Thermal Resistance

Parameter

Typ.

Max.

Units

R θ JC

Junction-to-Case

–––

3.3

R θ JA

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

–––

110

°C/W

HEXFET ? is a registered trademark of International Rectifier.

* Qualification standards can be found at http://www.irf.com/

www.irf.com

01/11/2011

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